High Electron Mobility Transistors (HEMTs) represent a revolutionary advance in semiconductor technology that enables ultra-high-speed and energy-efficient electronic devices. Utilizing heterojunctions made from compound semiconductors like Gallium Nitride (GaN) and Gallium Arsenide (GaAs), HEMTs deliver superior electron mobility, low noise, and high frequency performance unmatched by...

  The global SiC and GaN Power Electronics for Renewable Energy market is expected to grow with a CAGR of 16.57% from 2025 to 2034. Global Data Insights Consultancy announces the release of the report "Global SiC and GaN Power Electronics for Renewable Energy Market 2025 by Manufacturers, Regions, Type and Application, Forecast to 2034”. This report provides a detailed overview of...